Document Type

Article

Publication Date

9-2013

Advisor(s)

Ralu Divan; Argonne National Laboratory
Leonidas Ocola; Argonne National Laboratory

Disciplines

Electrical and Computer Engineering | Electro-Mechanical Systems | Electronic Devices and Semiconductor Manufacturing | Engineering | Engineering Science and Materials | Materials Science and Engineering | Mechanical Engineering | Mechanics of Materials | Nanoscience and Nanotechnology | Nanotechnology Fabrication | Other Materials Science and Engineering | Semiconductor and Optical Materials

Abstract

Ordered arrays of high-aspect-ratio micro/nanostructures in semiconductors stirred a huge scientific interest due to their unique one-dimensional physical morphology and the associated electrical, mechanical, chemical, optoelectronic, and thermal properties. Metal-assisted chemical etching enables fabrication of such high aspect ratio Si nanostructures with controlled diameter, shape, length, and packing density, but suffers from structure deformation and shape inconsistency due to uncontrolled migration of noble metal structures during etching. Hereby the authors prove that a Ti adhesion layer helps in stabilizing gold structures, preventing their migration on the wafer surface while not impeding the etching. Based on this finding, the authors demonstrate that the method can be used to fabricate linear Fresnel zone plates.

 
 

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