Document Type
Article
Publication Date
9-2013
Advisor(s)
Ralu Divan; Argonne National Laboratory
Leonidas Ocola; Argonne National Laboratory
Keywords
gold, etching, nanofabrication, silicon, electroplating
Disciplines
Electrical and Computer Engineering | Electro-Mechanical Systems | Electronic Devices and Semiconductor Manufacturing | Engineering | Engineering Science and Materials | Materials Science and Engineering | Mechanical Engineering | Mechanics of Materials | Nanoscience and Nanotechnology | Nanotechnology Fabrication | Other Materials Science and Engineering | Semiconductor and Optical Materials
Abstract
Ordered arrays of high-aspect-ratio micro/nanostructures in semiconductors stirred a huge scientific interest due to their unique one-dimensional physical morphology and the associated electrical, mechanical, chemical, optoelectronic, and thermal properties. Metal-assisted chemical etching enables fabrication of such high aspect ratio Si nanostructures with controlled diameter, shape, length, and packing density, but suffers from structure deformation and shape inconsistency due to uncontrolled migration of noble metal structures during etching. Hereby the authors prove that a Ti adhesion layer helps in stabilizing gold structures, preventing their migration on the wafer surface while not impeding the etching. Based on this finding, the authors demonstrate that the method can be used to fabricate linear Fresnel zone plates.
Recommended Citation
Divan, R., Rosenthal, D., Ogando, K., Ocola, L. E., Rosenmann, D., & Moldovan, N. (2013). Metal-assisted etching of silicon molds for electroforming. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 31(6). http://dx.doi.org/10.1116/1.4821651
Included in
Electro-Mechanical Systems Commons, Electronic Devices and Semiconductor Manufacturing Commons, Mechanics of Materials Commons, Nanoscience and Nanotechnology Commons, Nanotechnology Fabrication Commons, Other Materials Science and Engineering Commons, Semiconductor and Optical Materials Commons
Comments
Journal of Vacuum Science and Technology B